News / Event

UMS is excited to announce that it has secured a four-year contract from the Banque Publique d’Investissement (BPI) aimed at accelerating the development of cutting-edge solutions for advanced 5G communication systems. This initiative will also engage in pathfinding activities in collaboration with prominent academic institutions and industrial laboratories.  As the overall coordinator of the CAPTIVANT2 program—partially financed by BPI—UMS is dedicated to enhancing European technological sovereignty by tackling critical components within the RF link. This innovative program focuses on creating product solutions for both terrestrial 5G applications and space-based products, leveraging UMS’s industry-leading technology platforms in GaN and GaAs.

The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz. This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of Power Gain. This amplifier exhibits 33dBm Linear Power with -30dBc ACPR and 27dB Gain. In addition, the CHA6357 provides high linearity with a low consumption […]

UMS is proud to announce the completion of its involvement in SMART3, an integral part of the European Commission’s Important Project of Common European Interest (IPCEI) initiative launched in 2018. This collaboration built on the success of the earlier 5G_GaN2 project and marked a continued commitment to pioneering advanced packaging methods and heterogeneous integration in the semiconductor field.

New high-gain, low-noise amplifiers from United Monolithic Semiconductors for demanding applications available as X-MWblocks®

The CHA4262-QDG is a three-stage GaAs Medium Power Amplifier operating between 17GHz and 22GHz. This amplifier provides 23dBm saturated output power with 37% Power Added Efficiency and 20dBm Output Power at 1dB gain compression. The circuit exhibits a typical small signal gain of 26dB and 30dBm Output Third-Order Intercept Point. This Medium Power Amplifier is […]