UMS new 4” GaN GH50_20 technology under space evaluation with ESA
In early 2016, UMS started a space evaluation and capability approval program for its new 4” GH50-20 technology.
In early 2016, UMS started a space evaluation and capability approval program for its new 4” GH50-20 technology.
UMS GaN foundry has participated to the Microwave Journal GaN foundry survey
A new GaN GH25 PDK for ADS 2016 is now available.
A paper entitled “Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise Amplifiers” has been published in the IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, Vol 26 in January 2016 by O. Axelsson, N. Rorsman and M. Thorsell from the department of Microtechnology and Nanoscience, Chalmers University of technology and N. Billstrom from Saab AB, Electronic Defence Systems
The MCM ITP (Materials and Components for Missiles, Innovation and Technology Partnership) is a UK MoD and DGA sponsored research fund open to all Anglo-French companies and Academic Institutions.
