UMS is enlarging its GaN offer with the new CHA8610-99F 8.5-11GHz X-band High Power Amplifier, featuring a 15 to 18W output power with a high PAE of 40% at Psat.
The product is supplied as a bare die.
Main features:
| Frequency range: | 8.5-11GHz |
| PAE: | 40% @ Psat |
| Linear gain: | 24dB |
| Psat: | 15W |
| Biasing: | 30V@0.68A (quiescent) |
| Chip size: | 5.08 x 2.75 x 0.10mm |
This circuit is designed for a wide range of applications including military and commercial communication systems.
This product is manufactured using a 0.25µm gate length GaN pHEMT process.