Datasheet Download| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12W output power over 5.6-8.5GHz bandwidth. It offers high linearity performance with 30dB of Gain and an EVM of 33dB @34dBm average Pout (56MHz modulation bandwidth, 4QAM). It is dedicated to a wide range of applications such as Point-to-Point Radio.
This circuit is manufactured on a robust GaN-on-SiC HEMT technology and packaged in a standard surface mount 6x6 plastic QFN which is RoHS compliant. Input and output are 50Ω matched and integrate ESD RF protections.
| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||