Datasheet Download| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA8262-99F is a three stage monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth.
It offers high linearity performances and reaches more than 25% of Power Added Efficiency at saturation. The circuit is manufactured on a 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.
It is well suited for SatCom uplink and 5G communication applications.
| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||