Datasheet Download| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA7453-99F is a four stages High Power Amplifier operating between 37 and 42GHz and providing typically 9W of saturated output power and 23% of Power Added Efficiency.The typical power supply is 20V/290mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7453-99F provides a junction temperature below 160°C, even in saturation.
The circuit is manufactured on a space qualified GaN-on-SiC HEMT process and is available in bare die form.
It is firstly dedicated to space, military and telecom applications and well suited for a wide range of microwave applications and systems.
| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||