Datasheet Download| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA8618-99F is a monolithic GaN High Power Amplifier in the frequency band 6 18GHz with a control interface for fast switching. This driver provides 42.5 dBm of Output Power. The circuit exhibits a small signal gain of 33dB. The overall power supply is of 20V/1.2A (quiescent current).
It is designed for a wide range of applications, for military systems, such as electronic warfare, and test instrumentation.
The part is manufactured on robust GaN HEMT technology and is available as a bare die.
| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||