Datasheet Download| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA6154-99F is a three-stage monolithic GaN Medium Power Amplifier operating between 7.25 and 7.75GHz and typically providing 2.8W Output Power at 43% of Power Added Efficiency. This amplifier exhibits more than 1W linear Output Power associated to 17dBc NPR and 33% Power Added Efficiency. It also provides a typical small signal gain of 36.5dB. This amplifier is well suited for radar and space communications as well as telecommunications. It can be used as a Driver or a Power Amplifier.
The circuit is manufactured using a space evaluated, robust GaN-on-SiC HEMT process and is provided as a bare die for direct integration into hybrid circuits.
| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||