Datasheet Download| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA8154-99F is a two-stage monolithic GaN Power Amplifier operating between 7.25 and 7.75GHz and typically providing 18W Output Power at 49% of Power Added Efficiency. This amplifier exhibits more than 6W linear Output Power associated to 17dBc NPR and 42% Power Added Efficiency. It also provides a typical small signal gain of 28.5dB.
This amplifier is well suited for radar and space communications as well as telecommunications.
The circuit is manufactured using a space evaluated, robust GaN-on-SiC HEMT process and is provided as a bare die for direct integration into hybrid circuits.
| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||