Datasheet Download| Reference | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHA1010-99F is a monolithic three-stage wide-band Low Noise Amplifier.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured using a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
| Reference | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||