Datasheet Download| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA7362-QWA is Ka-band high power amplifier fabricated on a robust GaN on SiC process. Operating from 27.5 to 31GHz, it achieves 4W linear power with -25dBc IMD3. It also provides more than 26dB small signal gain. This amplifier exhibits 8W output power with 27% associated power added efficiency.
The CHA7362-QWA is dedicated to satellite communications and 5G infrastructure. Both RF input and output are matched to 50Ω and integrate ESD RF protections.
This power amplifier is supplied in low cost SMD RoHS compliant QFN plastic package.
| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||