Datasheet Download| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz. This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of Power Gain. This amplifier exhibits 33dBm Linear Power with -30dBc ACPR and 27dB Gain. In addition, the CHA6357 provides high linearity with a low consumption when operated with output power back-off. It therefore can be used as a Driver of HPA.
The component is internally matched to 50Ω at both the input and output. It integrates output power detector and ESD RF protection. It is manufactured on a robust GaN-on-SiC HEMT process.
It is well suited for VSAT, SatCom uplink, 5G communication and Radio links applications.
| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||