Datasheet Download| Reference | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHA3656-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier.
It is dedicated to space communications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in a surface mount hermetic package.
| Reference | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||