Datasheet Download| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHA3080-98F is a three-stage monolithic Medium Power Amplifier. This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used in differential mode.
It is dedicated to E-band telecommunication, particularly well suited for the new generation of high capacity Backhaul.
The circuit is manufactured with a pHEMT process, 0.1µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form with BCB layer protection.
| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||