| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA6105-99F is a monolithic three-stage medium power amplifier designed for X band applications.
The driver provides typically 31.5dBm output power at saturation and is suitable for systems requiring a high compression level. Moreover it includes a biasing control circuit that makes Pout less sensitive to spread and chip environment.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
| Reference | Gain (dB) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | IP3 (dBm) | RF Bandwidth (GHz) | Bias (mA) | Case | Bias (V) | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||